A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications

نویسندگان

  • Olivier Latry
  • Pascal Dherbécourt
  • Karine Mourgues
  • Hichame Maanane
  • J. P. Sipma
  • F. Cornu
  • Philippe Eudeline
  • Mohamed Masmoudi
چکیده

A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear with no incidence on RF figures of merit (Pout or PAE). Robustness and ruggedness are shown for LDMOS with this bench for radar applications in L-band. 2010 Elsevier Ltd. All rights reserved.

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 50  شماره 

صفحات  -

تاریخ انتشار 2010